دیتاشیت HY3912W
مشخصات دیتاشیت
| نام دیتاشیت |
HY3912W
|
| حجم فایل |
62.036
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HY3912W
-
Operating Temperature:
+175°C@(Tj)
-
Power Dissipation (Pd):
349W
-
Total Gate Charge (Qg@Vgs):
185nC@10V
-
Drain Source Voltage (Vdss):
125V
-
Input Capacitance (Ciss@Vds):
7.348nF@25V
-
Continuous Drain Current (Id):
190A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
465pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6.3mΩ@10V,85A
-
Package:
TO-247
-
Manufacturer:
HUAYI
